Features: `Trench Power JFET with low threshold voltage Vth.`Device fully ON with Vgs = 0.7V`Optimum for Low Side Buck Converters`Optimized for Secondary Rectification in isolated DC-DC`Low Rg and low Cds for high speed switching`No Body Diode ; extremely low Cds`Added Fast Recovery Schottky ...
LD1106S: Features: `Trench Power JFET with low threshold voltage Vth.`Device fully ON with Vgs = 0.7V`Optimum for Low Side Buck Converters`Optimized for Secondary Rectification in isolated DC-DC`Low Rg a...
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Features: SpecificationsDescriptionThis is the description of LD1117 series: The LD1117 series is ...
Parameter |
Symbol |
Ratings |
Units |
Drain-Source Voltage |
VDS |
15 |
V |
Gate-Source Voltage |
VGS |
-10 |
V |
Gate-Drain Voltage |
VGD |
-18 |
V |
Continuous Drain Current |
ID |
30 |
A |
Pulsed Drain Current |
ID |
60 |
A |
Single Pulse Drain-to-Source Avalanche Energy at 25°C (VDD= 5VDC, IL=30APK, L=0.3mH, RG=100 ) |
EAS |
120 |
mJ |
Junction Temperature |
TJ |
-55 to 150°C |
°C |
Storage Temperature |
TSTG |
-65 to 150°C |
°C |
Lead Soldering Temperature, 10 seconds |
T |
260°C |
°C |
Power Dissipation (Derated at 25°C on large heat sink) |
PD |
60 |
W |
The Power JFET transistor LD1106S from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DC-DC switching applications. The LD1106S is designed with a low threshold such that drivers can operate at 5V, which reduces the driver power dissipation and increases the overall efficiency. Lower threshold produces faster turn-on/turn-off, which minimizes the required dead time. The transistor "No Body Diode" provides a very low associated parasitic capacitance Cds. A Schottky Diode is added for applications where a freewheeling diode is required. Ringing is also reduced so that a lower voltage device may be a better solution.