Features: ·Diffused emitter ballasting resistors·Self-aligned process entirely ion implanted and gold metallization·Optimum temperature profile·Excellent performance and reliability.Application·Common emitter class-A linear power amplifiers up to 4 GHz.DescriptionThe LCE2009S and LBE2009S are NPN ...
LCE2009S: Features: ·Diffused emitter ballasting resistors·Self-aligned process entirely ion implanted and gold metallization·Optimum temperature profile·Excellent performance and reliability.Application·Comm...
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TVS Diodes - Transient Voltage Suppressors 1500W 24V Low Cap
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TVS Diodes - Transient Voltage Suppressors 1500W 24V Low Cap
The LCE2009S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A metal ceramic studless package.The LCE2009S is a maintenance type in a SOT442A metal ceramic capstan package.