LCE2009S

Features: ·Diffused emitter ballasting resistors·Self-aligned process entirely ion implanted and gold metallization·Optimum temperature profile·Excellent performance and reliability.Application·Common emitter class-A linear power amplifiers up to 4 GHz.DescriptionThe LCE2009S and LBE2009S are NPN ...

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SeekIC No. : 004392866 Detail

LCE2009S: Features: ·Diffused emitter ballasting resistors·Self-aligned process entirely ion implanted and gold metallization·Optimum temperature profile·Excellent performance and reliability.Application·Comm...

floor Price/Ceiling Price

Part Number:
LCE2009S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

·Diffused emitter ballasting resistors
·Self-aligned process entirely ion implanted and gold metallization
·Optimum temperature profile
·Excellent performance and reliability.



Application

·Common emitter class-A linear power amplifiers up to 4 GHz.


Description

The LCE2009S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A metal ceramic studless package.The LCE2009S is a maintenance type in a SOT442A metal ceramic capstan package.




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