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Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 120Watts 1.30/W 200 -65to150 7.0A 70V 70V 20VDe...

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LC421: Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVolta...

LC421 Data Sheet

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Part Number:: LC421
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/23

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Product Details

Description

Specifications

Total Device Dissipation	Junction to Case Thermal Resistance	Maximum Junction Temperature	Storage Temperature	DC Drain Current	Drain to Gate Voltage	Drain to Source Voltage	Gate to Source Voltage
120Watts	1.30/W	200	-65to150	7.0A	70V	70V	20V

Description

Silicon VDMOS and LDMOS transistors LC421 designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet"™ process features low feedback and output capacitances resulting in high F transistors with high input impedance and high efficiency.

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LC421

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