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LB401

Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 230Watts 0.75 /W 200 -65 to 150 13.5 A 70 V 70 V V20DescriptionSilicon VDMOS ...

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LB401: Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSou...

LB401 Data Sheet

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Part Number:
LB401
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Specifications

Total
Device
Dissipation		 Junction to
Case Thermal
Resistance		 Maximum
Junction
Temperature		 Storage
Temperature		 DC Drain
Current		 Drain to
Gate
Voltage		 Drain to
Source
Voltage		 Gate to
Source
Voltage
230Watts 0.75 /W
 200 -65 to 150 13.5 A 70 V 70 V V20





Description

Silicon VDMOS and LDMOS transistors LB401 designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

"Polyfet"TMprocess features low feedback and output capacitances resulting in high Ft transistors with high input impedance and high efficiency.






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