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LB1934T

Features: • Low voltage drive possible. When using same power supply for VCC and VS : VCC=VS=1.4V min. When using separate power supply for VCC and VS : VS=1.0V min., VCC=1.4V min.• Low saturation voltage : residual voltage (upper side transistor + lower side transistor) =0.5V typ. at ...

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SeekIC No. : 004391197 Detail

LB1934T: Features: • Low voltage drive possible. When using same power supply for VCC and VS : VCC=VS=1.4V min. When using separate power supply for VCC and VS : VS=1.0V min., VCC=1.4V min.• Low ...

LB1934T Data Sheet

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Part Number:
LB1934T
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Features:

• Low voltage drive possible. When using same power supply for VCC and VS : VCC=VS=1.4V min. When using separate power supply for VCC and VS : VS=1.0V min., VCC=1.4V min.
• Low saturation voltage : residual voltage (upper side transistor + lower side transistor) =0.5V typ. at Io=1A.
• Zero power dissipation in standby mode.
• Direct microcontroller drive possible (any strength relationships of voltage supported between microcontroller control signal and VCC or VS).
• Logic power supply and motor power supply can be supplied at separate pins.
• Built-in thermal protection circuit.
• Number of control signals can be optimized for the set. "2-motor control" or "1-motor + 2-load control" can be implemented by 3 control signals. In addition to the above, 4 control signals allow implemention of a "input ignore mode" where two control signals are used in conjunction with other IC input signals.
• Built-in spark killer diode.
• Compact, low-profile package (TSSOP-20 ; thickness=1.1 mm typ.)




Pinout

Connection Diagram


Specifications

Parameter Symbol Conditions Ratings Unit
Maximum input voltage VS max VS 0.3 to +8.0 V
VCC max VCC 0.3 to +8.0 V
Maximum output current IO max1 OUT1, OUT2 2000  
V
IO max2 OUT3P, OUT3N 1500 V
Maximum output voltage VO max OUT1, OUT2, OUT3P, OUT3N 0.3 to VS+VSF V
V
V
Maximum output current VI max MD1, MD2, IN1, IN2 0.3 to +8.0 mA
mA
mA
Allowable power dissipation Pd max With specified substrate* 850 mW
Operating temperature Topr   20 to +70 °C
Storage temperature Tstg   55 to +150 °C



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