LB1287

DescriptionThe LB1287 has circuit configuration of 5-unit Darlington transistor array consisting of NPN transistors and are capable of causing small input current to provide large current drive. They can be advantageously incorporated in equipment because the specially designed 14-pin DIP makes su...

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SeekIC No. : 004391021 Detail

LB1287: DescriptionThe LB1287 has circuit configuration of 5-unit Darlington transistor array consisting of NPN transistors and are capable of causing small input current to provide large current drive. The...

floor Price/Ceiling Price

Part Number:
LB1287
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/27

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Product Details

Description



Description

The LB1287 has circuit configuration of 5-unit Darlington transistor array consisting of NPN transistors and are capable of causing small input current to provide large current drive. They can be advantageously incorporated in equipment because the specially designed 14-pin DIP makes such equipment more compact. It can be used in various typesof driver(relay, solenoid, motor, display segment or digit driver (LED, lamp), interface to MOS or bipolar logic IC, power amplification of pulse fan-out extension etc.

The features of LB1287can be summarized as (1)large maximum drive current: 400mA; (2)large allowable power dissipation: 1.15W ; (3)wide range of operating supply voltage: LB1287 5 to 30V,LB1288 5 to 20V; (4)wide range of operating temperature: -20 °C to 80°C; (5)large current-amplification factor: 2000 or more.

The absolute maximum ratings of LB1287are  (1)collector-base Voltage VCBO: [LB1287] 30V/[LB1288] 20V; (2)collector-emitter voltage VCEO: [LB1287] -0.7 to +30V/[LB1288] -0.7 to +20V; (3)allowable power dissipation Pdmax: 1.15W; (4)input voltage Vin: Per unit -0.7 to +45V ; (5)collector current IC: Per unit 500 mA ; (6)junction temperature Tj: 125°C ; (7)operating temperature Topr: -20 to +80°C ; (8)storage temperature Tstg: -40 to +125°C(note: The substrate is connected to emitter).




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