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LAE4002S

Features: · Diffused emitter ballasting resistors· Self-aligned process entirely ion implanted and gold sandwich metallization· Optimum temperature profile· Excellent performance and reliability.ApplicationCommon emitter class A linear power amplifiers up to 4 GHz.DescriptionLAE4002S NPN silicon p...

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SeekIC No. : 004390863 Detail

LAE4002S: Features: · Diffused emitter ballasting resistors· Self-aligned process entirely ion implanted and gold sandwich metallization· Optimum temperature profile· Excellent performance and reliability.App...

LAE4002S Data Sheet

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Part Number:
LAE4002S
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Diffused emitter ballasting resistors
· Self-aligned process entirely ion implanted and gold sandwich metallization
· Optimum temperature profile
· Excellent performance and reliability.


Application

Common emitter class A linear power amplifiers up to 4 GHz.


Description

LAE4002S NPN silicon planar epitaxial microwave power transistor in a SOT100 metal ceramic package with emitter connected to the metallized lid. A miniature ceramic encapsulation is used for compatibility with stripline microwave circuits.




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