Features: · Diffused emitter ballasting resistors· Self-aligned process entirely ion implanted and gold sandwich metallization· Optimum temperature profile· Excellent performance and reliability.ApplicationCommon emitter class A linear power amplifiers up to 4 GHz.DescriptionLAE4002S NPN silicon p...
LAE4002S: Features: · Diffused emitter ballasting resistors· Self-aligned process entirely ion implanted and gold sandwich metallization· Optimum temperature profile· Excellent performance and reliability.App...
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LAE4002S NPN silicon planar epitaxial microwave power transistor in a SOT100 metal ceramic package with emitter connected to the metallized lid. A miniature ceramic encapsulation is used for compatibility with stripline microwave circuits.