Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 60Watts 2.50 /W 150 -65 to 150 4.5A 70V 70V 20VDescriptionSilicon VDMOS and ...
L8701P: Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSou...
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Total Device Dissipation |
Junction to Case Thermal Resistance |
Maximum Junction Temperature |
Storage Temperature |
DC Drain Current |
Drain to Gate Voltage |
Drain to Source Voltage |
Gate to Source Voltage |
60Watts | 2.50 /W | 150 | -65 to 150 | 4.5A | 70V | 70V | 20V |
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios,
Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" TMprocess features of the L8701P low feedback and output capacitancesresulting in high F transistors with high input impedance and high efficiency.