PinoutSpecifications Symbol Parameter Test conditions Value Unit VS Supply Voltage VSA = VSB = VS 60 V VOD Differential Voltage betweenVSA, OUT1A, OUT2A, SENSEA and VSB, OUT1B, OUT2B, SENSEB VSA = VSB = VS = 60V;VSENSEA = VSENSEB = GND 60 V VBOOT Bootstrap Peak Voltage...
L6208: PinoutSpecifications Symbol Parameter Test conditions Value Unit VS Supply Voltage VSA = VSB = VS 60 V VOD Differential Voltage betweenVSA, OUT1A, OUT2A, SENSEA and VSB, OUT1B,...
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Motor / Motion / Ignition Controllers & Drivers DMOS Full Bridge
Symbol | Parameter | Test conditions | Value | Unit |
VS | Supply Voltage | VSA = VSB = VS | 60 | V |
VOD | Differential Voltage between VSA, OUT1A, OUT2A, SENSEA and VSB, OUT1B, OUT2B, SENSEB |
VSA = VSB = VS = 60V; VSENSEA = VSENSEB = GND |
60 | V |
VBOOT | Bootstrap Peak Voltage | VSA = VSB = VS | VS + 10 | V |
VIN, VEN |
Input and Enable Voltage Range | -0.3 to +7 | V | |
VREFA, VREFB |
Voltage Range at pins VREFA and VREFB |
-0.3 to +7 | V | |
VRCA, VRCB | Voltage Range at pins RCA and RCB |
-0.3 to +7 | V | |
VSENSEA, VSENSEB |
Voltage Range at pins SENSEA and SENSEB |
-1 to +4 | V | |
IS(peak) | Pulsed Supply Current (for each VS pin), internally limited by the overcurrent protection |
VSA = VSB = VS; tPULSE < 1ms |
7.1 | A |
IS | RMS Supply Current (for each VS pin) |
VSA = VSB = VS | 2.8 | A |
Tstg, TOP | Storage and Operating Temperature Range |
-40 to 150 | °C |
The L6208 is a DMOS Fully Integrated Stepper Motor Driver with non-dissipative Overcurrent Protection, realized in MultiPower-BCD technology, which com- bines isolated DMOS Power Transistors with CMOS and bipolar circuits on the same chip. The L6208 in- cludes all the circuitry needed to drive a two-phase bipolar stepper motor including: a dual DMOS Full Bridge, the constant off time PWM Current Controller that performs the chopping regulation and the Phase Sequence Generator, that generates the stepping sequence. Available in PowerDIP24 (20+2+2), PowerSO36 and SO24 (20+2+2) packages, the L6208 features a non-dissipative overcurrent protec- tion on the high side Power MOSFETs and thermal shutdown.