L2801

Specifications Total DeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 50 Watts 3.40/W 200 -65to150 3.0A 70V 70V 20VD...

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SeekIC No. : 004389019 Detail

L2801: Specifications Total DeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVolt...

floor Price/Ceiling Price

Part Number:
L2801
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Specifications

Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
50 Watts
3.40/W
200
-65to150
3.0A
70V
70V
20V





Description

Silicon VDMOS and LDMOStransistors L2801 designed specifically for broadband RF applications. L2801 Suitable for Militry Radios, Cellular and Paging Amplifier BaseStations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet"TM process features low feedback and output capacitances resulting in high Ft transistors with high input impedance and high efficiency.






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