Specifications Total DeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 50 Watts 3.40/W 200 -65to150 3.0A 70V 70V 20VD...
L2801: Specifications Total DeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVolt...
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Total Device Dissipation |
Junction to Case Thermal Resistance |
Maximum Junction Temperature |
Storage Temperature |
DC Drain Current |
Drain to Gate Voltage |
Drain to Source Voltage |
Gate to Source Voltage |
50 Watts |
3.40/W |
200 |
-65to150 |
3.0A |
70V |
70V |
20V |
Silicon VDMOS and LDMOStransistors L2801 designed specifically for broadband RF applications. L2801 Suitable for Militry Radios, Cellular and Paging Amplifier BaseStations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet"TM process features low feedback and output capacitances resulting in high Ft transistors with high input impedance and high efficiency.