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Specifications Total DeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 80 Watts 1.80/W 200 -65to150 8.0A 36V 36V 20VD...

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L2721: Specifications Total DeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVolt...

L2721 Data Sheet

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Part Number:: L2721
Supply Ability:: 5000

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1~5000

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Negotiable

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15 Days

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Upload time: 2024/11/24

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Product Details

Description

Specifications

Total Device Dissipation	Junction to Case Thermal Resistance	Maximum Junction Temperature	Storage Temperature	DC Drain Current	Drain to Gate Voltage	Drain to Source Voltage	Gate to Source Voltage
80 Watts	1.80/W	200	-65to150	8.0A	36V	36V	20V

Description

Silicon VDMOS and LDMOStransistors L2721 designed specifically for broadband RF applications. L2721 Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet"^TM process features ow feedback and output capacitances resulting in high F_t transistors with high nput impedance and high efficiency.

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L2721

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