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L14N1

Photodetector Transistors 3mA PHOTO TRANS

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SeekIC No. : 0082462 Detail

L14N1: Photodetector Transistors 3mA PHOTO TRANS

L14N1 Data Sheet

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Part Number:
L14N1
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Maximum Power Dissipation : 600 mW Maximum Dark Current : 100 nA
Package / Case : TO-18    

Description

Maximum Dark Current : 100 nA
Package / Case : TO-18
Maximum Power Dissipation : 600 mW


Features:

· Hermetically sealed package
·  Wide reception angle
· Device can be used as a photodiode by using the collector and base leads.


Specifications

Parameter
Symbol
Rating
Unit
Operating Temperature
TOPR
-65 to +125
Storage Temperature
TSTG
-65 to +15

Soldering Temperature (Iron)(3,4,5 and 6)
TSOL-I
240 for 5 sec

Soldering Temperature (Flow)(3,4 and 6)
T SOL-F
260 for 10 sec
Collector to Emitter Breakdown Voltage
V CEO
45
V
Collector to Base Breakdown Voltage
VCBO
45
V
Emitter to Base Breakdwon Voltage
VEBO
5
V

Power Dissipation(TA = 25(1)
PD
300
mW

Power Dissipation(TC = 25(2)
PD
600
mW



Description

The L14N1/L14N2 are silicon phototransistors mounted in a wide angle, TO-18 package.


Parameters:

Technical/Catalog InformationL14N1
VendorFairchild Optoelectronics Group
CategorySensors, Transducers
Voltage - Collector Emitter Breakdown (Max)30V
Current - Collector (Ic) (Max)-
Current - Dark (Id) (Max)100nA
Power - Max300mW
OrientationTop View
Mounting TypeThrough Hole
Package / CaseTO-18
Wavelength880nm
Viewing Angle80°
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names L14N1
L14N1



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