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L14N1: Photodetector Transistors 3mA PHOTO TRANS

L14N1 Data Sheet

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Part Number:: L14N1
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/23

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What is this?

L14N1_Q evaluate
Photodetector Transistors 3mA PHOTO TRANS
L14N2 evaluate
Photodetector Transistors 6mA PHOTO TRANS
L14N2_Q evaluate
Photodetector Transistors 6mA PHOTO TRANS

Product Details

Quick Details

Maximum Power Dissipation :	600 mW	Maximum Dark Current :	100 nA
Package / Case :	TO-18

Description

Maximum Dark Current : 100 nA
Package / Case : TO-18
Maximum Power Dissipation : 600 mW

Features:

· Hermetically sealed package
· Wide reception angle
· Device can be used as a photodiode by using the collector and base leads.

Specifications

Parameter	Symbol	Rating	Unit
Operating Temperature	T_OPR	-65 to +125
Storage Temperature	T_STG	-65 to +15
Soldering Temperature (Iron)^{(3,4,5 and 6)}	T_SOL-I	240 for 5 sec
Soldering Temperature (Flow)^{(3,4 and 6)}	T _SOL-F	260 for 10 sec
Collector to Emitter Breakdown Voltage	V _CEO	45	V
Collector to Base Breakdown Voltage	V_CBO	45	V
Emitter to Base Breakdwon Voltage	V_EBO	5	V
Power Dissipation(TA = 25⁽¹⁾	P_D	300	mW
Power Dissipation(TC = 25⁽²⁾	P_D	600	mW

Description

The L14N1/L14N2 are silicon phototransistors mounted in a wide angle, TO-18 package.

Parameters:

Technical/Catalog Information	L14N1
Vendor	Fairchild Optoelectronics Group
Category	Sensors, Transducers
Voltage - Collector Emitter Breakdown (Max)	30V
Current - Collector (Ic) (Max)	-
Current - Dark (Id) (Max)	100nA
Power - Max	300mW
Orientation	Top View
Mounting Type	Through Hole
Package / Case	TO-18
Wavelength	880nm
Viewing Angle	80°
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	L14N1 L14N1

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L14N1

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