Specifications Total DeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 50 Watts 3.40W 200 -65 to 150 3.0A 70V 70V 20...
L125: Specifications Total DeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVolt...
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Total Device Dissipation |
Junction to Case Thermal Resistance |
Maximum Junction Temperature |
Storage Temperature |
DC Drain Current |
Drain to Gate Voltage |
Drain to Source Voltage |
Gate to Source Voltage |
50 Watts |
3.40W |
200 |
-65 to 150 |
3.0A |
70V |
70V |
20V |
Silicon VDMOS and LDMOS transistors L125 designed specifically for broadband RF applications. Suitable for Militry Radios, ellular and Paging Amplifier Base tations, Broadcast FM/AM, MRI, aser Driver and others.
"Polyfet" TM process features ow feedback and output capacitances esulting in high Ft transistors with high nput impedance and high efficiency.