L125

Specifications Total DeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 50 Watts 3.40W 200 -65 to 150 3.0A 70V 70V 20...

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SeekIC No. : 004388745 Detail

L125: Specifications Total DeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVolt...

floor Price/Ceiling Price

Part Number:
L125
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Specifications

Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
50 Watts
3.40W
200
-65 to 150
3.0A
70V
70V
20V



Description

Silicon VDMOS and LDMOS transistors L125  designed specifically  for broadband RF applications. Suitable for Militry Radios, ellular and Paging Amplifier Base tations, Broadcast FM/AM, MRI, aser Driver and others.  

"Polyfet" TM  process features ow feedback and output capacitances esulting in high Ft  transistors with high nput impedance and high efficiency.




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