Features: ·High density mounting is possible because of the complex type hich holds low-on-resistance,very-high-speed-switching nd 4-volt-drive N-/P-channel/ MOSFETS·Low ON-state resistanceSpecifications Parameter Symbol N-Channel P-Channel Unit Drain-source voltage VDSS 30 30 V ...
KW306: Features: ·High density mounting is possible because of the complex type hich holds low-on-resistance,very-high-speed-switching nd 4-volt-drive N-/P-channel/ MOSFETS·Low ON-state resistanceSpecifica...
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·High density mounting is possible because of the complex type hich holds low-on-resistance,very-high-speed-switching nd 4-volt-drive N-/P-channel/ MOSFETS
·Low ON-state resistance
Parameter | Symbol | N-Channel | P-Channel | Unit |
Drain-source voltage | VDSS | 30 | 30 | V |
Gate-source voltage | VGSS | ±25 | ±25 | V |
Drain Current(DC) | ID | 5 | 3 | A |
Drain Current(Pulse) *1 | IDP | 32 | -32 | A |
Total Dissipation *2 | PT | 2.0 | W | |
Allowable power Dissipation *2 | PD | 1.7 | W | |
Channel temperature | Tch | 150 | ||
Storage temperature | Tstg | -55 to ±150 |