Features: ·Composite type with a PNP transistor and a Schottky barrier diodecontained in one package facilitating high-density mounting.·The KTX511T consists of two chips which are equivalent to the KTA1532T and the KDR701S, respectively.·Ultrasmall-sized package permiting applied sets to be made ...
KTX511T: Features: ·Composite type with a PNP transistor and a Schottky barrier diodecontained in one package facilitating high-density mounting.·The KTX511T consists of two chips which are equivalent to the...
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CHARACTERISTIC |
SYMBOL |
RATING |
UNIT | |
Collector-Base Voltage |
VCBO |
-20 |
V | |
Collector-Emitter Voltage |
VCEO |
-20 |
V | |
Emitter-Base Voltage |
VEBO |
-5 |
V | |
Collector Current | DC |
IC |
-1.5 |
A |
Pulse |
ICP |
-3 |
A | |
Base Current |
IB |
-300 |
mA | |
Collector Power Dissipation |
PC * |
0.9 |
W | |
Junction Temperature |
Tj |
150 |
| |
Junction Temperature |
Tstg |
-55~150 |
|
CHARACTERISTIC |
SYMBOL |
RATING |
UNIT |
Repetitive Peak Reverse Voltage |
VRRM |
30 |
V |
Reverse Voltage |
VR |
30 |
V |
Average Forward Current |
IO |
0.7 |
A |
Non-Repetitive Peak Surge Current |
IFSM |
5 |
A |
Junction Temperature |
Tj |
125 |
|
Storage Temperature Range |
Tstg |
-55~150 |