Features: ·Complementary N-Channel and P-Channel MOSFET·Leadless SMD Package Provides Great Thermal Characteristics·Trench P-Channel for Low On Resistance·Low Gate Charge N-Channel for Test SwitchingSpecifications Parameter Symbol N-Channel P-Channel Unit Drain to source voltage VDSS ...
KTHD3100C: Features: ·Complementary N-Channel and P-Channel MOSFET·Leadless SMD Package Provides Great Thermal Characteristics·Trench P-Channel for Low On Resistance·Low Gate Charge N-Channel for Test Switchin...
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Parameter | Symbol | N-Channel | P-Channel | Unit |
Drain to source voltage | VDSS | 20 | 20 | V |
Gate to source voltage | VGSS | ±12 | ±8.0 | V |
Drain current Continuous *1 TA = 25 TA = 85 t 5 |
ID | 2.9 2.1 3.9 |
-3.2 -2.3 -4.4 |
A |
Drain current Pulsed t = 10 s *1 | IDM | 12 | -13 | A |
Total power dissipation t5 |
PD |
1.1 |
W | |
Operating and Storage Temperature Range | TJ, Tstg | -55 to 150 | ||
Source Current (Body Diode) | IS | 2.5 | A | |
Lead Temperature for Soldering Purposes | TL | 260 | ||
Junction-to-Ambient *1 Steady State t 10s |
RJA | 113 60 |
/W |