Features: ·Complementary N-Channel and P-Channel MOSFET·Leadless SMD Package Featuring Complementary Pair·Low RDS(on) in a ChipFET Package for High Efficiency Performance·Low Profile ( 1.10 mm) Allows Placement in Extremely Thin·Environments Such as Portable ElectronicsSpecifications Paramete...
KTHC5513: Features: ·Complementary N-Channel and P-Channel MOSFET·Leadless SMD Package Featuring Complementary Pair·Low RDS(on) in a ChipFET Package for High Efficiency Performance·Low Profile ( 1.10 mm) Allo...
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Parameter | Symbol | N-Channel | P-Channel | Unit |
Drain to source voltage | VDSS | 20 | 20 | V |
Gate to source voltage | VGSS | ±12 | ±12 | V |
Drain current Continuous *1 TA = 25 TA = 85 t 5 |
ID | 2.9 2.1 3.9 |
-2.2 -1.6 -3 |
A |
Drain current Pulsed t = 10 s *1 | IDM | 12 | -9 | A |
Total power dissipation t5 |
PD |
1.1 |
W | |
Operating and Storage Temperature Range | TJ, Tstg | -55 to 150 | ||
Lead Temperature for Soldering Purposes | TL | 260 | ||
Junction-to-Ambient *1 Steady State t 5 |
RJA | 110 60 |
/W |