KTD2060

The KTD2060 is triple diffused NPN transistor.Features of the KTD2060 are:(1)goog linearity of hFE;(2)complementary to KTB1368.

The absolute maximum ratings of the KTD2060 can be summarized as:(1)collector-base voltage:80V;(2)collector-emitter voltage:80V;(3)emitter-base voltage:5V;(4)collector current:4A;(5)base current:0.4A;(6)collector power dissipation(Tc=25):25W;(7)junction temperature:150;(8)storage temperature range:-55 to 150.

The electrical characteristics of the KTD2060 are:(1)collector cut-off current(VCB=80V, IE=0):30uA;(2)emitter cut-off current(VEB=5V, IC=0):100uA;(3)collector-emitter breakdown voltage(IC=50mA, IB=0):80V;(4)emitter-base breakdown voltage(IE=10mA, IC=0):5V;(5)collector-emitter saturation voltage(IC=3A, IB=0.3A):0.45V to 1.5V;(6)base-emitter voltage(VCE=5V,IC=3A):1.0V to 1.5V;(7)transition frequency(VCE=5V, IC=0.5A):8.0MHz;(8)collector output capacitance(VCB=10V, IE=0, f=1MHz):90pF.

If you want to know more information such as the electrical characteristics about the KTD2060, please download the datasheet in www.seekic.com or www.chinaicmart.com .