KTD1415

The KTD1415 is triple diffused NPN transistor.Features of the KTD1415 are:(1)high DC current gain:hFE=2000(min.) at VCE=3V, IC=3A;(2)low collector saturation voltage:VCE(sat)=1.5V(max.)(IC=3A).

The absolute maximum ratings of the KTD1415 can be summarized as:(1)collector-base voltage:100V;(2)collector-emitter voltage:100V;(3)emitter-base voltage:5V;(4)collector current:7A;(5)base current:0.2A;(6)collector power dissipation:Tc=25..30W;(7)junction temperature:150;(8)storage temperature range:-55 to 150.

The electrical characteristics of the KTD1415 are:(1)collector cut-off current(VCE=100V,IE=0):100uA;(2)collector-emitter breakdown voltage(IC=50mA,IB=0):100V;(3)collector-emitter saturation voltage:IC=3A,IB=6mA..0.9V to 1.5V,IC=7A,IB=14mA..1.2V to 2.0V;(4)Base-emitter saturation voltage(IC=3A, IB=6mA):1.5V to 2.5V;(5)turn-on time:0.8uS;(6)storage time:3.0uS;(7)fall time:2.5uS;(8)emitter cut-off current(VEB=5V, IC=0):3.0mA.

If you want to know more information such as the electrical characteristics about the KTD1415, please download the datasheet in www.seekic.com or www.chinaicmart.com .