Features: ·Adoption of MBIT Processes.·Large Current Capacitance.·Low Collector-to-Emitter Saturation Voltage.·High-Speed Switching.·Ultrasmall Package Facilitates Miniaturization in end Products.·High Allowable Power Dis sipation.·Complementary to KTA1551T.Specifications CHARACTERISTIC SYMB...
KTC3551T: Features: ·Adoption of MBIT Processes.·Large Current Capacitance.·Low Collector-to-Emitter Saturation Voltage.·High-Speed Switching.·Ultrasmall Package Facilitates Miniaturization in end Products.·H...
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CHARACTERISTIC | SYMBOL | RATING | UNIT | |
Collector-Base Voltage | VCBO | 80 | V | |
Collector-Emitter Voltage | VCES | 80 | V | |
VCEO | 50 | |||
Emitter-Base Voltage | VEBO | 5 | V | |
Collector Current | DC | IC | 1.0 | A |
Pulse | ICP | 3 | A | |
Description | IB | 200 | mA | |
Collector Power Dissipation | PC * | 0.9 | W | |
Junction Temperature | Tj | 150 | ||
Storage Temperature Range | Tstg | -55~150 |