Features: ·Adoption of MBIT Processes.·Large Current Capacitance.·Low Collector-to-Emitter Saturation Voltage.·High Speed Switching.·Ultrasmall Package facilitates miniaturization in end products.·High Allowable Power Dissipation.·Complementary to KTA1541T.Specifications CHARACTERISTIC SYMBO...
KTC3541T: Features: ·Adoption of MBIT Processes.·Large Current Capacitance.·Low Collector-to-Emitter Saturation Voltage.·High Speed Switching.·Ultrasmall Package facilitates miniaturization in end products.·H...
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CHARACTERISTIC | SYMBOL | RATING | UNIT | |
Collector-Base Voltage | VCBO | 40 | V | |
Collector-Emitter Voltage | VCEO | 30 | V | |
Emitter-Base Voltage | VEBO | 5 | V | |
Collector Current | DC | IC | 1.5 | A |
Pulse | ICP | 3 | A | |
Description | IB | 300 | mA | |
Collector Power Dissipation | PC * | 0.9 | W | |
Junction Temperature | Tj | 150 | ||
Storage Temperature Range | Tstg | -55~150 |