Features: Adoption of MBIT Processes.High Current Capacitance.Low Collector-to-Emitter Saturation Voltage.High Speed Switching.Ultrasmall-Sized Package permitting applied sets to be made small and slim.High Allowable Power Dissipation.Complementary to KTA1536T.Specifications CHARACTERISTIC ...
KTC3536T: Features: Adoption of MBIT Processes.High Current Capacitance.Low Collector-to-Emitter Saturation Voltage.High Speed Switching.Ultrasmall-Sized Package permitting applied sets to be made small and s...
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CHARACTERISTIC | SYMBOL | RATING | UNIT | |
Collector-Base Voltage VCBO | VCBO | 20 | V | |
Collector-Emitter Voltage | VCEO | 20 | V | |
Emitter-Base Voltage | VEBO | 5 | V | |
Collector Current |
DC |
IC | 5 | |
Pulse | ICP | 8 | A | |
Base Current | IB | 1.2 | A | |
Collector Power Dissipation | PC * | 0.9 | W | |
Junction Temperature | Junction Temperature Tj | 150 | ||
Storage Temperature Range | Tstg | -55~150 |