Features: ·Adoption of MBIT Processes.·High Current Capacitance.·Low Collector-to-Emitter Saturation Voltage.·High Speed Switching.·Ultrasmall-Sized Package permitting applied sets to bemade small and slim.·High Allowable Power Dissipation. ·Complementary to KTA1535TSpecifications CHARACTER...
KTC3535T: Features: ·Adoption of MBIT Processes.·High Current Capacitance.·Low Collector-to-Emitter Saturation Voltage.·High Speed Switching.·Ultrasmall-Sized Package permitting applied sets to bemade small a...
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CHARACTERISTIC |
SYMBOL |
RATING |
UNIT | |
Collector-Base Voltage |
VCBO |
20 |
V | |
Collector-Emitter Voltage |
VCEO |
20 |
V | |
Emitter-Base Voltage |
VEBO |
5 |
V | |
Collector Current | DC |
IC |
3 |
A |
Pulse |
ICP |
5 | ||
Base Current |
IB |
600 |
mA | |
Collector Powe |
P C* |
0.9 |
W | |
Junction Temperature |
Tj |
150 |
| |
Storage Temperature Range |
Tstg |
-55~150 |
|