Features: ·Adoption of MBIT processes.·Low collector-to-emitter saturation voltage.·Fast switching speed.·Large current capacity and wide ASO.·Complementary to KTD1624.Specifications CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCE...
KTB1124: Features: ·Adoption of MBIT processes.·Low collector-to-emitter saturation voltage.·Fast switching speed.·Large current capacity and wide ASO.·Complementary to KTD1624.Specifications CHARACTERI...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
CHARACTERISTIC | SYMBOL | RATING | UNIT |
Collector-Base Voltage | VCBO | -60 | V |
Collector-Emitter Voltage | VCEO | -50 | V |
Emitter-Base Voltage | VEBO | -6 | V |
Collector Current | IC | -3 | A |
Collector Current (Pulse) | ICP | -6 | A |
Collector Power Dissipation | PC | 500 | mW |
PC* |
1 | W | |
Junction Temperature | Tj | 150 | |
Storage Temperature Range | Tstg | -55~150 |