Transistors Bipolar (BJT) NPN Si Transistor Epitaxial
KST5551MTF: Transistors Bipolar (BJT) NPN Si Transistor Epitaxial
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 160 V |
Emitter- Base Voltage VEBO : | 6 V | Maximum DC Collector Current : | 0.6 A |
DC Collector/Base Gain hfe Min : | 80 | Configuration : | Single |
Maximum Operating Frequency : | 300 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SOT-23 |
Packaging : | Reel |
Technical/Catalog Information | KST5551MTF |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 160V |
Current - Collector (Ic) (Max) | 600mA |
Power - Max | 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 1mA, 10mA |
Frequency - Transition | 300MHz |
Current - Collector Cutoff (Max) | - |
Mounting Type | Surface Mount |
Package / Case | SOT-23 |
Packaging | Tape & Reel (TR) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | KST5551MTF KST5551MTF |