Transistors Bipolar (BJT) NPN Si Transistor Epitaxial
KST10MTF: Transistors Bipolar (BJT) NPN Si Transistor Epitaxial
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 25 V | ||
Emitter- Base Voltage VEBO : | 3 V | DC Collector/Base Gain hfe Min : | 60 | ||
Configuration : | Single | Maximum Operating Frequency : | 650 MHz | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-23 | Packaging : | Reel |
Technical/Catalog Information | KST10MTF |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Frequency - Transition | 650MHz |
Noise Figure (dB Typ @ f) | - |
Current - Collector (Ic) (Max) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 4mA, 10V |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 25V |
Gain | - |
Power - Max | 350mW |
Compression Point (P1dB) | - |
Package / Case | SOT-23 |
Packaging | Cut Tape (CT) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | KST10MTF KST10MTF KST10MTFCT ND KST10MTFCTND KST10MTFCT |