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KSP56BU: Transistors Bipolar (BJT) PNP Si Transistor Epitaxial

KSP56BU Data Sheet

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Part Number:: KSP56BU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/12/21

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KSP5179 evaluate
Specifications Symbol Parameter Value Units VCBO Collector-Base Voltage 20 V VCE...
KSP5179BU evaluate
Transistors Bipolar (BJT)
KSP5179TA evaluate
Transistors Bipolar (BJT) NPN Si Transistor Epitaxial

Product Details

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Transistor Polarity :	PNP	Collector- Emitter Voltage VCEO Max :	80 V
Emitter- Base Voltage VEBO :	- 4 V	Maximum DC Collector Current :	0.5 A
DC Collector/Base Gain hfe Min :	50	Configuration :	Single
Maximum Operating Frequency :	50 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-92
Packaging :	Bulk

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Package / Case : TO-92
Collector- Emitter Voltage VCEO Max : 80 V
Maximum DC Collector Current : 0.5 A
Packaging : Bulk
DC Collector/Base Gain hfe Min : 50
Maximum Operating Frequency : 50 MHz
Emitter- Base Voltage VEBO : - 4 V

Parameters:

Technical/Catalog Information	KSP56BU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	500mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA
Frequency - Transition	50MHz
Current - Collector Cutoff (Max)	100nA
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	KSP56BU KSP56BU

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KSP56BU

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