Transistors Darlington NPN Si Transistor Epitaxial Darlington
KSP27TA: Transistors Darlington NPN Si Transistor Epitaxial Darlington
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Configuration : | Single | Transistor Polarity : | NPN | ||
Collector- Emitter Voltage VCEO Max : | 60 V | Emitter- Base Voltage VEBO : | 10 V | ||
Maximum DC Collector Current : | 0.5 A | Maximum Collector Cut-off Current : | 0.1 uA | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-92 | Packaging : | Ammo |
Technical/Catalog Information | KSP27TA |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Current - Collector (Ic) (Max) | 500mA |
Power - Max | 625mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 100mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 100A, 100mA |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | - |
Mounting Type | Through Hole |
Package / Case | TO-92 |
Packaging | Tape & Box (TB) |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | KSP27TA KSP27TA |