Transistors Bipolar (BJT) PNP Epitaxial Sil
KSH350TM: Transistors Bipolar (BJT) PNP Epitaxial Sil
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 300 V | ||
Emitter- Base Voltage VEBO : | - 3 V | Maximum DC Collector Current : | 0.5 A | ||
DC Collector/Base Gain hfe Min : | 30 | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-252 | Packaging : | Reel |
Technical/Catalog Information | KSH350TM |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 300V |
Current - Collector (Ic) (Max) | 500mA |
Power - Max | 1.56W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 10V |
Vce Saturation (Max) @ Ib, Ic | - |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | 100A |
Mounting Type | Surface Mount |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
Packaging | Tape & Reel (TR) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | KSH350TM KSH350TM |