Transistors Bipolar (BJT) NPN Si Transistor Epitaxial
KSH29ITU: Transistors Bipolar (BJT) NPN Si Transistor Epitaxial
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 40 V |
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 1 A |
DC Collector/Base Gain hfe Min : | 15 | Configuration : | Single |
Maximum Operating Frequency : | 3 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-251 |
Packaging : | Tube |
Technical/Catalog Information | KSH29ITU |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Current - Collector (Ic) (Max) | 1A |
Power - Max | 1.56W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 1A, 4V |
Vce Saturation (Max) @ Ib, Ic | 700mV @ 125mA, 1A |
Frequency - Transition | 3MHz |
Current - Collector Cutoff (Max) | 50A |
Mounting Type | Surface Mount |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | KSH29ITU KSH29ITU |