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KSE5020S: Transistors Bipolar (BJT) NPN Sil Transistor

KSE5020S Data Sheet

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Part Number:: KSE5020S
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	500 V
Emitter- Base Voltage VEBO :	7 V	Maximum DC Collector Current :	3 A
DC Collector/Base Gain hfe Min :	15	Configuration :	Single
Maximum Operating Frequency :	18 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-126
Packaging :	Bulk

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Maximum DC Collector Current : 3 A
Emitter- Base Voltage VEBO : 7 V
DC Collector/Base Gain hfe Min : 15
Packaging : Bulk
Package / Case : TO-126
Maximum Operating Frequency : 18 MHz
Collector- Emitter Voltage VCEO Max : 500 V

Parameters:

Technical/Catalog Information	KSE5020S
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	500V
Current - Collector (Ic) (Max)	3A
Power - Max	30W
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 300mA, 5V
Vce Saturation (Max) @ Ib, Ic	1V @ 300mA, 1.5A
Frequency - Transition	18MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-126
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	KSE5020S KSE5020S

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KSE5020S

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