Transistors Bipolar (BJT) PNP Epitaxial Sil
KSE350STU: Transistors Bipolar (BJT) PNP Epitaxial Sil
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 300 V | ||
Emitter- Base Voltage VEBO : | - 5 V | Maximum DC Collector Current : | 0.5 A | ||
DC Collector/Base Gain hfe Min : | 30 | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-126 | Packaging : | Tube |
Technical/Catalog Information | KSE350STU |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 300V |
Current - Collector (Ic) (Max) | 500mA |
Power - Max | 20W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 10V |
Vce Saturation (Max) @ Ib, Ic | - |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | - |
Mounting Type | Through Hole |
Package / Case | TO-126 |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | KSE350STU KSE350STU |