Transistors Darlington NPN Epitaxial Sil Darl
KSD560YTU: Transistors Darlington NPN Epitaxial Sil Darl
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Configuration : | Single | Transistor Polarity : | NPN |
Collector- Emitter Voltage VCEO Max : | 100 V | Emitter- Base Voltage VEBO : | 7 V |
Collector- Base Voltage VCBO : | 150 V | Maximum DC Collector Current : | 5 A |
Maximum Collector Cut-off Current : | 1 uA | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-220 |
Packaging : | Tube |
Technical/Catalog Information | KSD560YTU |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN - Darlington |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Current - Collector (Ic) (Max) | 5A |
Power - Max | 30W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 5000 @ 3A, 2V |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 3mA, 3A |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | - |
Mounting Type | Through Hole |
Package / Case | TO-220-3 (Straight Leads) |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | KSD560YTU KSD560YTU |