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KSD288O

Transistors Bipolar (BJT) NPN Epitaxial Sil

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SeekIC No. : 00210659 Detail

KSD288O: Transistors Bipolar (BJT) NPN Epitaxial Sil

KSD288O Data Sheet

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Part Number:
KSD288O
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 55 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 3 A
DC Collector/Base Gain hfe Min : 40 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Bulk    

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 3 A
Packaging : Bulk
DC Collector/Base Gain hfe Min : 40
Package / Case : TO-220
Collector- Emitter Voltage VCEO Max : 55 V


Parameters:

Technical/Catalog InformationKSD288O
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)55V
Current - Collector (Ic) (Max)3A
Power - Max25W
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 500mA, 5V
Vce Saturation (Max) @ Ib, Ic1V @ 100mA, 1A
Frequency - Transition-
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSD288O
KSD288O



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