KSD261CGBU, US $ .36-.64 , Fairchild Semiconductor, KSD261CGBU DataSheet download, circuit diagram from SeekIC.com

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KSD261CGBU: Transistors Bipolar (BJT) NPN Epitaxial Sil

KSD261CGBU Data Sheet

US $ .36~.64 / Piece | Get Latest Price

Part Number:: KSD261CGBU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/24

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Recent History
What is this?

KSD2012 evaluate
Specifications Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VC...
KSD2012GTU evaluate
US $.16 - .32 / Piece

Transistors Bipolar (BJT) NPN Si Transistor Epitaxial
KSD2012Y evaluate
Transistors Switching (Resistor Biased)

Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	20 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	0.5 A
DC Collector/Base Gain hfe Min :	120	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-92	Packaging :	Bulk

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Collector- Emitter Voltage VCEO Max : 20 V
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Maximum DC Collector Current : 0.5 A
Packaging : Bulk
DC Collector/Base Gain hfe Min : 120

Parameters:

Technical/Catalog Information	KSD261CGBU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	20V
Current - Collector (Ic) (Max)	500mA
Power - Max	500mW
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic	400mV @ 50mA, 500mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	KSD261CGBU KSD261CGBU

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KSD261CGBU

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