KSD227GBU Selling Leads, Price trend , Fairchild Semiconductor, KSD227GBU DataSheet download, circuit diagram from SeekIC.com

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KSD227GBU: Transistors Bipolar (BJT) NPN Epitaxial Sil

KSD227GBU Data Sheet

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Part Number:: KSD227GBU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/24

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KSD2012 evaluate
Specifications Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VC...
KSD2012GTU evaluate
US $.16 - .32 / Piece

Transistors Bipolar (BJT) NPN Si Transistor Epitaxial
KSD2012Y evaluate
Transistors Switching (Resistor Biased)

Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	25 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	0.3 A
DC Collector/Base Gain hfe Min :	70	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-92	Packaging :	Bulk

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
DC Collector/Base Gain hfe Min : 70
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Collector- Emitter Voltage VCEO Max : 25 V
Packaging : Bulk
Maximum DC Collector Current : 0.3 A

Parameters:

Technical/Catalog Information	KSD227GBU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	25V
Current - Collector (Ic) (Max)	300mA
Power - Max	400mW
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 30mA, 1V
Vce Saturation (Max) @ Ib, Ic	400mV @ 30mA, 300mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	KSD227GBU KSD227GBU

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KSD227GBU

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