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KSD1691OS

Transistors Bipolar (BJT) NPN Epitaxial Sil

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SeekIC No. : 00212382 Detail

KSD1691OS: Transistors Bipolar (BJT) NPN Epitaxial Sil

KSD1691OS Data Sheet

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Part Number:
KSD1691OS
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/19

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 7 V Maximum DC Collector Current : 5 A
DC Collector/Base Gain hfe Min : 100 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-126 Packaging : Bulk    

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
DC Collector/Base Gain hfe Min : 100
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 7 V
Maximum DC Collector Current : 5 A
Packaging : Bulk
Package / Case : TO-126


Parameters:

Technical/Catalog InformationKSD1691OS
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)60V
Current - Collector (Ic) (Max)5A
Power - Max20W
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 2A, 1V
Vce Saturation (Max) @ Ib, Ic300mV @ 200mA, 2A
Frequency - Transition-
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-126
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSD1691OS
KSD1691OS



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