Transistors Bipolar (BJT) NPN Epitaxial Transistor
KSD1616GTA: Transistors Bipolar (BJT) NPN Epitaxial Transistor
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 50 V |
Emitter- Base Voltage VEBO : | 6 V | Maximum DC Collector Current : | 1 A |
DC Collector/Base Gain hfe Min : | 135 | Configuration : | Single |
Maximum Operating Frequency : | 160 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-92-3 Kinked Lead |
Packaging : | Ammo |
Technical/Catalog Information | KSD1616GTA |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Current - Collector (Ic) (Max) | 1A |
Power - Max | 750mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 2V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 50mA, 1A |
Frequency - Transition | 160MHz |
Current - Collector Cutoff (Max) | - |
Mounting Type | Through Hole |
Package / Case | TO-92 |
Packaging | Tape & Box (TB) |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | KSD1616GTA KSD1616GTA |