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KSD1408GTU

Transistors Bipolar (BJT) NPN Si Transistor Epitaxial

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SeekIC No. : 00211433 Detail

KSD1408GTU: Transistors Bipolar (BJT) NPN Si Transistor Epitaxial

KSD1408GTU Data Sheet

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Part Number:
KSD1408GTU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 80 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 4 A
DC Collector/Base Gain hfe Min : 40 Configuration : Single
Maximum Operating Frequency : 8 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220
Packaging : Tube    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Maximum DC Collector Current : 4 A
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Collector- Emitter Voltage VCEO Max : 80 V
DC Collector/Base Gain hfe Min : 40
Package / Case : TO-220
Maximum Operating Frequency : 8 MHz


Parameters:

Technical/Catalog InformationKSD1408GTU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)80V
Current - Collector (Ic) (Max)4A
Power - Max25W
DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 500mA, 5V
Vce Saturation (Max) @ Ib, Ic1V @ 300mA, 3A
Frequency - Transition3MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-220F
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSD1408GTU
KSD1408GTU



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