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KSD1021GBU: Transistors Bipolar (BJT) NPN Epitaxial Sil

KSD1021GBU Data Sheet

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Part Number:: KSD1021GBU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/12/21

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KSD1020 evaluate
Specifications Symbol Parameter Ratings Units VCBO Collector-Base Voltage 30 V ...
KSD1020GBU evaluate
Transistors Bipolar (BJT) NPN Epitaxial Sil
KSD1020GTA evaluate
Transistors Bipolar (BJT) NPN Epitaxial Transistor

Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	30 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	1 A
DC Collector/Base Gain hfe Min :	120	Configuration :	Single
Maximum Operating Frequency :	130 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-92
Packaging :	Bulk

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Maximum Operating Frequency : 130 MHz
Maximum DC Collector Current : 1 A
Packaging : Bulk
Collector- Emitter Voltage VCEO Max : 30 V
DC Collector/Base Gain hfe Min : 120

Parameters:

Technical/Catalog Information	KSD1021GBU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	30V
Current - Collector (Ic) (Max)	1A
Power - Max	350mW
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic	500mV @ 100mA, 1A
Frequency - Transition	130MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92S
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	KSD1021GBU KSD1021GBU

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KSD1021GBU

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