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KSD1020GTA_Q

Transistors Bipolar (BJT) NPN Epitaxial Transistor

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SeekIC No. : 00213941 Detail

KSD1020GTA_Q: Transistors Bipolar (BJT) NPN Epitaxial Transistor

KSD1020GTA_Q Data Sheet

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Part Number:
KSD1020GTA_Q
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/6

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 25 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 0.7 A
DC Collector/Base Gain hfe Min : 200 at 100 mA at 1 V Configuration : Single
Maximum Operating Frequency : 170 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-92S
Packaging : Ammo    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Packaging : Ammo
Collector- Emitter Voltage VCEO Max : 25 V
Maximum DC Collector Current : 0.7 A
Maximum Operating Frequency : 170 MHz
Package / Case : TO-92S
DC Collector/Base Gain hfe Min : 200 at 100 mA at 1 V


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