Transistors RF Bipolar Small Signal NPN Si Transistor Epitaxial
KSC838OBU: Transistors RF Bipolar Small Signal NPN Si Transistor Epitaxial
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Configuration : | Single | Transistor Polarity : | NPN | ||
Maximum Operating Frequency : | 250 MHz | Collector- Emitter Voltage VCEO Max : | 30 V | ||
Emitter- Base Voltage VEBO : | 4 V | Continuous Collector Current : | 30 mA | ||
Power Dissipation : | 250 mW | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-92 | Packaging : | Bulk |
Technical/Catalog Information | KSC838OBU |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Current - Collector (Ic) (Max) | 30mA |
Power - Max | 250mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 2mA, 12V |
Vce Saturation (Max) @ Ib, Ic | 400mV @ 1mA, 10mA |
Frequency - Transition | 250MHz |
Current - Collector Cutoff (Max) | - |
Mounting Type | Through Hole |
Package / Case | TO-92 |
Packaging | Bulk |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | KSC838OBU KSC838OBU |