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KSC838CYTA

Transistors Bipolar (BJT) NPN Epitaxial Transistor

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SeekIC No. : 00211793 Detail

KSC838CYTA: Transistors Bipolar (BJT) NPN Epitaxial Transistor

KSC838CYTA Data Sheet

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Part Number:
KSC838CYTA
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 30 V
Emitter- Base Voltage VEBO : 4 V Maximum DC Collector Current : 0.03 A
DC Collector/Base Gain hfe Min : 40 Configuration : Single
Maximum Operating Frequency : 250 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-92
Packaging : Ammo    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Package / Case : TO-92
Maximum Operating Frequency : 250 MHz
Emitter- Base Voltage VEBO : 4 V
Packaging : Ammo
DC Collector/Base Gain hfe Min : 40
Collector- Emitter Voltage VCEO Max : 30 V
Maximum DC Collector Current : 0.03 A


Parameters:

Technical/Catalog InformationKSC838CYTA
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)30V
Current - Collector (Ic) (Max)30mA
Power - Max250mW
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 2mA, 12V
Vce Saturation (Max) @ Ib, Ic400mV @ 1mA, 10mA
Frequency - Transition250MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-92
PackagingTape & Box (TB)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSC838CYTA
KSC838CYTA



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