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SeekIC No. : 00211119 Detail

KSC838CYBU: Transistors Bipolar (BJT) NPN Epitaxial Sil

KSC838CYBU Data Sheet

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Part Number:: KSC838CYBU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/12/25

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KSC815 evaluate
Specifications Symbol Parameter Value Units VCBO Collector-Base Voltage 6...
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Transistors Bipolar (BJT) NPN Epitaxial Sil
KSC815CYBU evaluate
Transistors Bipolar (BJT) NPN Epitaxial Sil

Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	30 V
Emitter- Base Voltage VEBO :	4 V	Maximum DC Collector Current :	0.03 A
DC Collector/Base Gain hfe Min :	40	Configuration :	Single
Maximum Operating Frequency :	250 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-92
Packaging :	Bulk

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Package / Case : TO-92
Maximum Operating Frequency : 250 MHz
Emitter- Base Voltage VEBO : 4 V
Packaging : Bulk
DC Collector/Base Gain hfe Min : 40
Collector- Emitter Voltage VCEO Max : 30 V
Maximum DC Collector Current : 0.03 A

Parameters:

Technical/Catalog Information	KSC838CYBU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	30V
Current - Collector (Ic) (Max)	30mA
Power - Max	250mW
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 2mA, 12V
Vce Saturation (Max) @ Ib, Ic	400mV @ 1mA, 10mA
Frequency - Transition	250MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	KSC838CYBU KSC838CYBU

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KSC838CYBU

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