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KSC388YBU: Transistors Bipolar (BJT) NPN Epitaxial Sil

KSC388YBU Data Sheet

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Part Number:: KSC388YBU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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1~5000

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Upload time: 2024/11/21

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Specifications Symbol Parameter Value Units VCBO Collector-Base Voltage 3...
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Transistors Bipolar (BJT) NPN Epitaxial Sil
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Transistors Bipolar (BJT) NPN Epitaxial Sil

Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	25 V
Emitter- Base Voltage VEBO :	4 V	Maximum DC Collector Current :	0.05 A
DC Collector/Base Gain hfe Min :	20	Configuration :	Single
Maximum Operating Frequency :	300 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-92
Packaging :	Bulk

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Package / Case : TO-92
Maximum Operating Frequency : 300 MHz
DC Collector/Base Gain hfe Min : 20
Emitter- Base Voltage VEBO : 4 V
Collector- Emitter Voltage VCEO Max : 25 V
Packaging : Bulk
Maximum DC Collector Current : 0.05 A

Parameters:

Technical/Catalog Information	KSC388YBU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	25V
Current - Collector (Ic) (Max)	50mA
Power - Max	300mW
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 12.5mA, 15mA
Vce Saturation (Max) @ Ib, Ic	200mV @ 1.5mA, 15mA
Frequency - Transition	300MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	KSC388YBU KSC388YBU

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KSC388YBU

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