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SeekIC No. : 00212183 Detail

KSC3552OTU: Transistors Bipolar (BJT) NPN Sil Transistor

KSC3552OTU Data Sheet

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Part Number:: KSC3552OTU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/5/20

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KSC3073 evaluate
Specifications Symbol Parameter Value Units VCBO Collector-Base Voltage 3...
KSC3073OTU evaluate
Transistors Bipolar (BJT) NPN Epitaxial Sil
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Transistors Bipolar (BJT) NPN Epitaxial Sil

Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	800 V
Emitter- Base Voltage VEBO :	7 V	Maximum DC Collector Current :	12 A
DC Collector/Base Gain hfe Min :	10	Configuration :	Single
Maximum Operating Frequency :	15 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-3P
Packaging :	Tube

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Maximum DC Collector Current : 12 A
Packaging : Tube
Emitter- Base Voltage VEBO : 7 V
Collector- Emitter Voltage VCEO Max : 800 V
DC Collector/Base Gain hfe Min : 10
Maximum Operating Frequency : 15 MHz
Package / Case : TO-3P

Parameters:

Technical/Catalog Information	KSC3552OTU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	800V
Current - Collector (Ic) (Max)	12A
Power - Max	150W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 800mA, 5V
Vce Saturation (Max) @ Ib, Ic	2V @ 1.2A, 6A
Frequency - Transition	15MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-3P
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	KSC3552OTU KSC3552OTU

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