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KSC3502ESTU: Transistors Bipolar (BJT) NPN Epitaxial Sil

KSC3502ESTU Data Sheet

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Part Number:: KSC3502ESTU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/12/22

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Specifications Symbol Parameter Value Units VCBO Collector-Base Voltage 3...
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Transistors Bipolar (BJT) NPN Epitaxial Sil
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Transistors Bipolar (BJT) NPN Epitaxial Sil

Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	200 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	0.1 A
DC Collector/Base Gain hfe Min :	40	Configuration :	Single
Maximum Operating Frequency :	150 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-126
Packaging :	Tube

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Maximum DC Collector Current : 0.1 A
DC Collector/Base Gain hfe Min : 40
Maximum Operating Frequency : 150 MHz
Package / Case : TO-126
Collector- Emitter Voltage VCEO Max : 200 V

Parameters:

Technical/Catalog Information	KSC3502ESTU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	200V
Current - Collector (Ic) (Max)	100mA
Power - Max	5W
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 10V
Vce Saturation (Max) @ Ib, Ic	600mV @ 2mA, 20mA
Frequency - Transition	150MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-126
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	KSC3502ESTU KSC3502ESTU

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