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KSC3502ES

Transistors Bipolar (BJT) NPN Epitaxial Sil

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SeekIC No. : 00211147 Detail

KSC3502ES: Transistors Bipolar (BJT) NPN Epitaxial Sil

KSC3502ES Data Sheet

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Part Number:
KSC3502ES
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 200 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 0.1 A
DC Collector/Base Gain hfe Min : 40 Configuration : Single
Maximum Operating Frequency : 150 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-126
Packaging : Bulk    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 0.1 A
Packaging : Bulk
DC Collector/Base Gain hfe Min : 40
Maximum Operating Frequency : 150 MHz
Package / Case : TO-126
Collector- Emitter Voltage VCEO Max : 200 V


Parameters:

Technical/Catalog InformationKSC3502ES
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)200V
Current - Collector (Ic) (Max)100mA
Power - Max5W
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 10V
Vce Saturation (Max) @ Ib, Ic600mV @ 2mA, 20mA
Frequency - Transition150MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-126
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSC3502ES
KSC3502ES



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