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KSC3488GBU

Transistors Bipolar (BJT) NPN Si Transistor Epitaxial

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SeekIC No. : 00212584 Detail

KSC3488GBU: Transistors Bipolar (BJT) NPN Si Transistor Epitaxial

KSC3488GBU Data Sheet

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Part Number:
KSC3488GBU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 25 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 0.3 A
DC Collector/Base Gain hfe Min : 70 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-92 Packaging : Bulk    

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
DC Collector/Base Gain hfe Min : 70
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Collector- Emitter Voltage VCEO Max : 25 V
Packaging : Bulk
Maximum DC Collector Current : 0.3 A


Parameters:

Technical/Catalog InformationKSC3488GBU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)25V
Current - Collector (Ic) (Max)300mA
Power - Max300mW
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 50mA, 1V
Vce Saturation (Max) @ Ib, Ic400mV @ 30mA, 300mA
Frequency - Transition400MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-92S
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSC3488GBU
KSC3488GBU



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