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KSC3076YTU: Transistors Bipolar (BJT) NPN Epitaxial Sil

KSC3076YTU Data Sheet

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Part Number:: KSC3076YTU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/12/22

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Specifications Symbol Parameter Value Units VCBO Collector-Base Voltage 3...
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Transistors Bipolar (BJT) NPN Epitaxial Sil
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Transistors Bipolar (BJT) NPN Epitaxial Sil

Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	50 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	2 A
DC Collector/Base Gain hfe Min :	70	Configuration :	Single
Maximum Operating Frequency :	100 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-251
Packaging :	Tube

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 50 V
DC Collector/Base Gain hfe Min : 70
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Maximum Operating Frequency : 100 MHz
Maximum DC Collector Current : 2 A
Package / Case : TO-251

Parameters:

Technical/Catalog Information	KSC3076YTU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	2A
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 2A
Frequency - Transition	100MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	KSC3076YTU KSC3076YTU

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